Real time copper resistivity measurements during sputter deposition

Electrical resistivity of thin copper films sputtered onto silicon dioxide is measured in real time. The electrical resistivity is shown to strongly depend on the film's thickness, for thicknesses below the bulk mean free path of copper (390 /spl Aring/). Furthermore, observations are made on the relaxation of the electrical resistivity after the growth (by sputtering) is terminated. Both the magnitude of change in the electrical resistivity, and the time scale of change is observed to be a function of the film's thickness.