1.3-1.5 /spl mu/m wavelength quantum dots self-formed in GaAs/InAs superlattices grown on InP (411) substrates

High lateral density (~10
^-11
cm
^-2
) quantum dot (QD) structures are self-formed by growing the (GaAs)
₂
(InAs)
₂
short period superlattices (SLs) on InP(411)A substrates by gas source MBE. QD structures are well aligned along two perpendicular directions. Multilayer quantum dot structures sandwiched with InP barrier layers showed strong photoluminescence emission with wavelengths of 1.3 - 1.5μm depending on the SL period.