Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition

RF plasma-enhanced chemical vapor deposition (PECVD) has been used to deposit blanket tungsten on silicon dioxide for MOS gate formation. A range of deposition conditions are investigated. A postdeposition high-temperature anneal is necessary to reduce the resistivity and improve the adhesion of the film. Capacitors fabricated with the tungsten gate show good electrical properties with no apparent detrimental effects caused by the presence of either the plasma or fluorine during the deposition.<
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