SIMS quantification round-robin study at Evans analytical group

Bulk-doped silicon wafers were measured at four EAG (Evans Analytical Group) site laboratories in a round-robin study of the calibration of SIMS measurements of dopant concentrations in silicon. Mean B, P, and As concentrations were determined for several bulk-doped silicon reference wafers. Absolute concentration calibration scales are determined by NIST Standard Reference Materials (B, As) or accepted Consensus Reference Materials (P). At any single EAG measurement site, the average repeatibility of an individual dopant concentration measurement was about 0.7% for B, 2.1% for P, and 2.3% for As. Across the four sites, the best reproducibility for concentration measurements was found when bulk-doped standards were used for calibration. Average reproducibility of dopant concentration measurements across the EAG was 0.9% for B, 2.5% for P, and 2.6% for As.