A low energy plasma flood gun using RF plasma formation

A plasma flood gun (PFG) system useful for 300 mm wafer has been developed by using an RF plasma for the medium current implanter EXCEED2300. To produce low energy electrons, the electron energy is filtered by magnetic fields. To eliminate dose shift, a low flow rate of Xe gas is adopted. A linear geometry of the plasma production source chamber improves the spatial uniformity of the plasma flooding across the 300 mm wafer. The metal contamination and the maintenance time are also greatly improved with the RF plasma formation.