Low-frequency noise in TFSOI lateral n-p-n bipolar transistors

Low-frequency (1/f) noise is characterized as a function of base current density (J/sub B/) on thin-film-silicon-on-insulator (TFSOI) lateral bipolar transistors. In the low injection region of operation, the noise power spectral density was proportional to J/sub B//sup 1.8/ for J/sub B/<0.4 /spl mu/A//spl mu/m/sup 2/, which suggest that the noise in these devices is primarily dominated by a uniform distribution of noise sources across the emitter-base area. However in the high current region of operation (J/sub B/>0.4 /spl mu/m/sup 2/), the noise bias dependence shifts to J/sub B//sup 1.2/, indicating current crowding effects, alter the contribution of noise sources near the extrinsic base link region of the device. In addition to the expected 1/f noise and shot noise, we have observed a bias dependent generation-recombination (Gm) noise source in some of the devices. This G/R noise is correlated to random-telegraph-signal (RTS) noise resulting from single trapping centers, located at or near the spacer oxide and/or the Si to SIMOX interface, which modulate the emitter-base space charge region.