DC and high-frequency characteristics of GaN-based IMPATTs

The dynamic characteristics of wurtzite (Wz) phase and zincblende (Znb) phase GaN IMPATTs are reported at D-band and compared with Si and GaAs-based IMPATT devices at the same operating conditions and frequency of operation. It is shown that GaN-based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.