Fast programming/erasing of thin-oxide EEPROMs

This work demonstrates that conventional thin-oxide EEPROM cells can be programmed (erased) in the nanosecond time scale with voltages lower than 18 V and still feature data retention times of the order of a few hours after 100 K program/erase (P/E) cycles. Our results suggest that thin-oxide nonvolatile (NV) memory devices can be suitable for fast read/write dynamic applications, at least when high cycling endurance is not a primary specification.