Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1.2-W continuous-wave operation at 735 nm

Tensile-strained GaAsP quantum wells embedded in AlGaAs large optical cavity structure were investigated at an emission wavelength of 735 nm. 1.2-W continuous-wave operation for 100-μm stripe width diode lasers over 1000 h is reported. Experiments with different stripe widths showed a high stability at an output power of 12-mW/μm stripe widths with degradation rates below 5/spl middot/10/sup -5/ h/sup -1/, i.e., lifetimes larger than 5000 h could be expected.