Modeling on GaAs/AlGaAs quantum well infrared photodetector

In this paper we demonstrate the modelling and simulation of the GaAs/AlGaAs quantum well infrared photodetector (QWIP). For a practical device and material structure and properties, a theoretical model is established based on the Schrodinger and Maxwell equations. Some of the basic parameters in the theoretical model are determined by the micro-optical characterization of the QWIP material. Based on the experimental determined QWIP material properties and the theoretical model, a detail computer simulation is performed on the optical coupling, photo-excited carrier and dark current on the practical device structure. Several phenomenon of the QWIP, including fine structure in the QWTP's photocurrent spectrum and irradiation effect on QWIP have been explained well by our theoretical model. The experimental results on the GaAs/AlGaAs QWIP demonstrated also the validity of this theoretical model.