Temperature dependent characterization of bipolar silicon power semiconductors-a new physical model validated by device-internal probing between 400-100 K

A new physical model for characterizing the temperature dependent operation of power semiconductor devices for network simulation purposes is presented. It is based on the application of a new continuity equation for describing the carrier transport in the low doped layer of power semiconductor structures. Modern results of carrier mobility description, particularly concerning electron hole scattering (EHS) are strictly taken into account even as temperature conditioned effective ionization of doping atoms. The model is validated by free carrier absorption (FCA) experiments at temperatures between 400-100 K. It could be shown that models based on standard continuity equations and standard mobility expressions are principally inconsistent.