Modeling and fabrication of vertical pillar MOSFETs made in recrystallized Si

We report a simple analytical model for vertical pillar MOSFETs including bulk traps. The model predicts that the threshold voltage increases as the trap density increases. The analytical solution yields good agreement with MEDICI simulations confirming the model. The model is used to evaluate the electrical characteristics of devices previously fabricated (Cho et al, Symp. VLSI Tech., p. 31, 1999).