Silicide application on gated single-crystal, polycrystalline and amorphous silicon FEAs. II. Co silicide

For pt. I see ibid., vol.48, no.1, p.149-54 (Jan. 2001). For enhancement and stabilization of electron emission, Co silicides were formed from Co, Co/Ti and Ti/Co layers on silicon FEAs. Since Ti prevents oxygen adsorption on the Co film during silicidation, uniform and smooth Co silicide layers can be obtained by depositing Co first and then Ti on silicon tips, followed by rapid annealing. Among Co silicide FEAs, Co silicide formed from Ti/Co bi-layers shows the lowest leakage current, the highest failure voltage over 152 V and the largest anode current over 1 mA at the gate voltage of 150 V. Compared with silicon field emitters, the silicide FEAs formed from Ti/Co layers exhibited a significant improvement in maximum emission current, emission current fluctuation and stability, and failure voltage.