Stabilization of emitter arrays by MOSFET for magnetic sensor applications

The operation of the magnetic sensor is based on the deflection of the electron current due to the Lorentz force. The anode is split into two parts. The differential signal from the two parts of split anode is a measure of the applied magnetic field. The aim of this study is the optimization of a vacuum microelectronic magnetic field sensor based on the combination with a metal oxide semiconductor field effect transistor (MOSFET) for stabilization of emission current. The emitted electrons could be supplied both by the thermal generation current in depletion layer under the emitters and by the inversion layer under the gate. A longer gate exhibited larger emitter currents. Electrical characteristics and behaviour of carriers in the device structure have been investigated by means of device simulation.