Residual stress analysis in thin membranes obtained by boron diffusion processes

In this paper we analyze the stress induced in thin membranes (5-10 /spl mu/m), obtained by wet etching after thermal diffusion from boron solid source. Using a new solution we reveal defects and analyze the chemical mechanism and the causes of their appearance. We proved that the residual stress could be changed, from tensile to compressive modeling post diffusion processes. Finally, we correlate the kind of defects with the stress effect.