Optimization of InGaAs/InP p-i-n photodiode for dual axis position detection systems

The authors present the optimization of a quadrant p-i-n photodiode structure on a InGaAs/InP heterostructure suited for infrared laser telemetry and optical centering applications. Taking into account the influence of material characteristics, mid structure parameters of the photoresponse were designed. The authors fabricated a quadrant photodiode characterized by a responsivity of 0.62 A/W for each photodetector element, a good photoresponse uniformity on active area with deviations less than 1 percent and a good position resolution obtained by minimizing the crosstalk between elements.