A comprehensive bipolar avalanche multiplication compact model for circuit simulation

In this paper, a new comprehensive bipolar transistor avalanche multiplication model is presented that takes into account the finite thickness of the epilayer, modulation of the electric field by the collector current (Kirk effect), current spreading in the epilayer and quasi-saturation. Two parameters are needed to model the collector voltage dependency at small current levels and one parameter is required to describe high current effects. The dependency of the collector-emitter breakdown voltage BV/sub ceo/ with collector current is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately.