A contribution to the modeling of short channel MOSFETs for HF circuit simulations

The present DC and AC model BSIM3v3 is not capable of HF-modeling short-channel MOSFETs accurately. With the addition of two parameters to the existing model, the quality of simulated small-signal parameters could be improved up to 20 GHz. Both a gate resistance and a substrate resistance were added to BSIM3v3. A new method to calculate the substrate resistance from small-signal parameters is presented and evaluated. Different techniques to determine both the gate resistance and the substrate resistance were compared and analyzed regarding their advantages and disadvantages.