Thermal parameter extraction technique using DC I-V data for HBT transistors

The power dissipated by a Heterojunction Bipolar Transistor (HBT) due to the self-heating effects can be observed from the current collapse seen in the DC I-V characteristics. Using this characteristic, we propose an extraction technique to directly extract the thermal resistance and the barrier height of the base emitter diode at ambient temperature. The technique is based on calculating the power dissipated, at different bias conditions, then relating this to the variation in the temperature dependent variable V/sub BE/. The technique has been validated mathematically and experimentally using traditional extraction techniques, where parameters are extracted over temperature.