Optical characterization of antenna-area-dependent gate oxide charging damage in MOS capacitors by photoreflectance spectroscopy

Thin gate oxide charging damage has been studied by photoreflectance (PR) spectroscopy in MOS structure samples. Antenna-area-dependent oxide charging damage such as the generation of SiO/sub 2//Si interface states as well as that of electron trap sites in the oxides, has been also addressed by the decrease of the PR peak signal intensity from MOS capacitors, and also confirmed by the capacitance-voltage (C-V) characteristics.