A new practical method to include recombination-generation process in self-consistent Monte Carlo device simulation

A new practical method to incorporate recombination-generation (R-G) processes into self consistent Monte Carlo (MC) device simulation is considered. To calculate the R-G rate, a phenomenological expression like that for the well-known SRH mechanism is used instead of treating carriers in the microscopic interaction level. The most abundant and accurate information in MC simulation, carrier concentrations, can be utilized more directly to enhance the statistical stability and accuracy for the R-G effects. Realistic device examples, the minority carrier injection of a forward-biased n/sup +/-p diode and the body effect from impact ionization of a 800 /spl Aring/ thin-film SOI MOSFET, are used to demonstrate the validity of this approach.