Field-induced charged device model testing of magnetoresistive recording heads

This paper reports on the behavior of a magnetoresistive (MR) recording head in external electric fields for the first time. Both energy and voltage failure thresholds during field-induced charged device model (CDM) testing are measured. An equivalent circuit model for the MR head is constructed and used in PSPICE circuit simulations. The first atomic force microscope (AFM) data and SEM micrographs of CDM damaged MR heads are also presented and analyzed.