A 65 V, 0.56 m/spl Omega/.cm/sup 2/ Resurf LDMOS in a 0.35 /spl mu/m CMOS process

This paper reports a 65 V, 0.56 m/spl Omega/.cm/sup 2/ Resurf LDMOS with a wide safe operating area integrated into a 0.35 /spl mu/m CMOS process. The superior performance of the device is achieved by advanced implantation techniques without additional thermal steps and without resorting to high-tilt implants.