Self-packaged millimeter-wave Si-IMPATT diodes

This paper presents a technology process, which integrates diode and housing in a self-packaged millimeter-wave Si-IMPATT device. The housing consists of a high resistivity Si substrate, on which the active layer is grown by MBE. The use of an electrochemical etch stop in hot, aqueous KOH is described. This is the key step to the realization of the top contact of the active layer. The device is thermocompression bonded in a single step on a diamond heat sink, unlike conventional beamlead diodes with quartz ring housing which need three bonding steps.