Self-steered silicon receiver array

A monolithic integrated surface oriented Schottky barrier diode is described. The diode is integrated into a HRS substrate incorporated in a microstrip patch constructed over a patterned SiO/sub 2/ layer. The process technology developed is low cost. The resulting integrated diode is planar and has sensitivity of 1.8 mV/mW/cm/sup 2/ at 15 GHz. By using pairs of elements it is shown how a simple self-tracking receiver can be constructed in integrated all-silicon form.