Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode

We propose an unstrained Al/sub 0.66/In/sub 0.34/As/sub 0.85/Sb/sub 0.15//In/sub 0.53/Ga/sub 0.47/As heterostructure for double-barrier resonant tunneling diode. A peak-to-valley current ratio of 22.3 and a peak current density of 8.9 kA/cm/sup 2/ were achieved for the unstrained Al/sub 0.66/In/sub 0.34/As/sub 0.85/Sb/sub 0.15//In/sub 0.53/Ga/sub 0.47/As double-barrier resonant tunneling diode at room temperature.