Characteristics of high deposition rate PIN diodes from pure SiH/sub 4/ and 10% dilution of SiH/sub 4/ in H/sub 2/

In this paper, we present the results of the electrical characterization of PIN diodes up to 18 /spl mu/m thick fabricated on high deposition rates a-Si:H layers obtained from pure SiH/sub 4/ and from a 10% dilution of SiH/sub 4/ in H/sub 2/, using a 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) with geometrical modifications in the plasma reactor. I-V and I-T curves were investigated, concluding that the changes introduced in the deposition reactor to increase the deposition rate did not affect the characteristics of the fabricated diodes. Results are compared with characteristics, reported for diodes obtained by standard and other high deposition rate methods.