A simplified procedure to calculate the power gain definitions of FETs

A graphical method to easily derive the power gain definitions of field-effect transistors (FETs) is proposed in this paper. This method is applicable to MESFETs and high electron-mobility transistors described by the typical /spl pi/ model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains. The accuracy of this approach has been proven by comparison with simulations of the FET complete model.