Silicon MOS memory with self-aligned quantum dot on narrow channel

The essential technology for fabricating the quantum dot flash memory is nanolithography. With E-beam patterning technology and Cl/sub 2/ based RIE (Reactive Ion Etching), a self-aligned 100 nm wide quantum dot and 100 nm wide narrow channel were fabricated. Also, quantum dot flash memory was fabricated. The memory operation was observed. The threshold voltage shift was about 1.0 V and the corresponding number of electrons involved in this operation was estimated to be about 70. The memory also showed excellent retention characteristics.