New considerations for optimization of signal and noise performances of mm-wave FETs based on sliced modeling

We have analyzed the signal and noise performances of mm-wave FETs and specially focused on three factors in the device modeling. These include the effect of electrode loading, the effect of the location and the number of input/output probes and the influence of the number of slices in sliced modeling. The results show that these factors may improve the device performance and increase the accuracy of the device modeling. This analysis is very important in the application, modeling and optimization of mm-wave transistors, specially for travelling wave transistors (TWTs).