Low temperature (LT) grown GaAs buffer layers for III-V semiconductor processes

Low Temperature Grown (LTG) GaAs buffers have been shown to eliminate backgating, reduce subthreshold leakage, provide ultrashort carrier lifetimes and radiation hardness. However, undoped LTG buffers have shown poor reliability, poor RF performance and inconsistent lot-to-lot properties. Recent p-doped LT GaAs buffers promise thermally stable material to withstand changes during annealing steps, plus improved performance over undoped LT GaAs buffers.