AlGaAs grating surface-emitting beam deflector with ridge structure

A ridge-waveguide-type AlGaAs grating surface-emitting beam deflector was fabricated. The deflection is controlled by carrier-induced refractive-index change of the waveguide. The maximum deflection angle change is about 0.6 degrees , which corresponds to about ten resolvable spots. The temperature raising of the active layer was estimated in comparison with the characteristics for direct and pulsed current operation. It was 6.5 degrees C for the injection current (DC) of 20 mA.<
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