1.48-μm-wavelength ASM-DC-PBH LDs with extremely uniform lasing characteristics

High-power 1.48-μm erbium-doped fiber amplifier pumping InGaAsP MQW laser diodes (LDs) have been investigated using all selective metal-organic vapor phase epitaxy grown (ASM) fabrication method. The method provided a precise dimension control of multiquantum-well active layers and current blocking layers, resulting in excellent current blocking characteristics and extremely uniform lasing characteristics even at high injection current. The average light output power of 262 mW at 1 A with a standard deviation of as small as 1.4 mW for 20 consecutive LDs has been achieved.