Nonlinear Electrothermal Model for Investigation of Heat Transfer Process in a 22-nm FD-SOI MOSFET

In this paper, thermal stability and phonon transport of 22-nm fully depleted silicon on insulator (FD-SOI) MOSFET is investigated. On the one hand, we havedemonstrated that the single-phase-lag(SPL) model is able to predict the phonon transport in 22-nm FD-SOI MOSFET. On the other hand, we have investigated the role of the spacer between source, drain, (S/D) and gate of the MOS transistor for the increasing of the temperature. An electrothermal model based on nonlinear SPL equation coupled with an electric model has been investigated. To solve the proposed model, we have performed a numerical study based on the finite element method. The proposed model has been validated on the basis of available results. We found that the present model is able to predict the phonons and electrons transport in nano FD-SOI-MOSFET compared with the DPL model. In a technological viewpoint, we found that the distance between S/D and gate has an important role for the increasing of the temperature.