Self-heating effect in SOI MOSFETs

Self-heating effect in SOI MOSFETs affects the carrier mobility, SOI MOSFETs threshold voltage and the band gap of silicon in channel. The mechanism of heat generation and heat dissipation in SOI MOSFETs is analyzed in this paper on the basis of which a simple self-heating effect model is established. The model introduces only one factor related with self-heating effect whose value can be easily determined according to the device structure parameters. The model is also verified experimentally.