Numerical simulation of semiconductor devices considering self-heating effects

Electro-thermal simulation, which considers the influence of self-heating effects an semiconductor devices, is becoming more and more important. But as the popular device simulator, PISCES-2ET needs a big improvement in order to realize simulation including lattice temperature, since the simulator has paid more attention to carrier temperature rather than lattice temperature. This paper presents an electro-thermal device simulation program which is developed on the basis of the device simulation program PISCES-2H. In comparison with PISCES-2ET, our program includes the influence of lattice temperature on Poisson's equation and the electric field, providing additional thermal boundary conditions and temperature dependent models. Furthermore, two additional numerical methods are adopted according to the characteristics of the electro-thermal simulation in our program. They are more suitable for simulation considering self-heating effects than the common Gummel and full Newton methods.