Inkjet Printed HfO2-Based ReRAMs: First Demonstration and Performance Characterization

In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO
₂
dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low power applications. These characteristics, along with the known flexible properties of the inkjet-printed dielectric layer, make this kind of ReRAMs suitable for portable devices that do not require large integration density i.e. low density nonvolatile memories or reconfigurable analog circuits.