Semiconductor laser model based on moment method solutions of the Boltzmann transport equation

Semiconductor laser models based on density matrix theory have been frequently reported on and are useful in recognizing stimulation emission. However, most of these models use the two-discrete-level approximation, making it difficult to obtain a detailed description of the carrier distribution. The mechanism of the carrier distribution variations in semiconductor lasers will be discussed from the point of view of the Boltzmann transport equation with the relaxation time approximation, and its effect on laser performance will be demonstrated in this paper.