Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT

In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (V
_th
) during switching was observed. This dynamic V
_th
behavior of SFG device is because of the special device structure of SFG transistors. Based on the V
_th
-programmable behavior of the SFG transistor, a SFG-based GaN high electron mobility transistor was proposed and enhancement-mode was realized with writing-0 into the transistor during every switching operation by simulation.