A comparison of IGBT models for use in circuit design

In choosing an accurate insulated gate bipolar transistor (IGBT) model for power electronic circuit design, physics-based models are frequently preferred due to their high accuracy and fast simulation speed in comparison to other types of models. In this paper, an experimental comparison of two such models is made, using parameters extracted from experimental measurements. The comparison focuses on two particular IGBTs-the BUP202 and the BUK854-representing the two common types of IGBT, respectively, the nonpunchthrough and the punchthrough IGBT. The models are investigated for the IGBT's operation in three situations typical of low-power (600 V, 10 A) applications.