A 2.0 /spl mu/m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells

We report an avalanche photodiode structure for use at wavelengths as long as 2.1 /spl mu/m. Light is absorbed in a 100 period structure consisting of In/sub 0.83/Ga/sub 0.17/As quantum wells strain-compensated by In/sub 0.83/Ga/sub 0.17/P barrier layers. Photogenerated electrons are injected into a high electric field In/sub 0.52/Al/sub 0.48/As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of /spl sim/5 nA and responsivities of 45 A/W at a wavelength of 1.93 /spl mu/m are observed.