DC and transient characterization of a compact Schottky body contact technology for SOI transistors

A self-aligned Schottky diode method for body contacting partially depleted silicon-on-insulator (SOI) transistors applicable to technologies that incorporate silicide cladded junctions is presented. The Schottky body contacted transistor requires no extra manufacturing steps, uses the same or less area than a transistor using other body contacting schemes and allows bi-directional operation. Extensive dc and transient characterization of the Schottky body contact illustrates its utility.