Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combing N/sub 2/O nitridation and chemical mechanical polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q/sub hd/ (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.