Fabrication of high-performance Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As/GaAs resonant tunneling diodes using a microwave-compatible technology

A microwave-compatible process for fabricating planar integrated resonant tunneling diodes (RTDs) is described. High-performance RTDs have been fabricated using Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As/GaAs strained layers. Peak-to-valley current ratios (PVRs) of 4.8:1 with simultaneous peak current densities of 4*10/sup 4/ A/cm/sup 2/ have been achieved at room temperature for diodes of area 9 mu m/sup 2/. Accurate measurements of reflection gain versus frequency between 1.5 and 26.5 GHz in the negative differential region indicate that the present technology is promising for millimeter-wave integrated circuits including self-oscillating mixers, frequency multipliers, and detectors.<
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