RF-MEMS Technology for 5G: Series and Shunt Attenuator Modules Demonstrated up to 110 GHz

RF-MEMS technology is emerging as a key enabling solution to address demanding requirements that upcoming 5G standards pose upon passive devices and networks. In this letter, we demonstrate experimentally-to the best of our knowledge, for the first time-, RF-MEMS 2-state basic attenuator modules, from nearly dc up to 110 GHz. Physical samples are realized in the CMM-FBK RF-MEMS technology, and design variations are tested. Resistive loads are placed in series or shunt configuration on the RF line, and the attenuation is ON/OFF switched by electrostatically driven MEMS micro-relays. Tested devices show attenuation levels (S21) from -5 to -10 dB, depending on the resistive load, with flatness of 2-3 dB from 10 MHz to 50 GHz and of ~2 dB from 60 up to 110 GHz. When OFF, the attenuator modules introduce loss (S21) better than -1 dB up to 50 GHz and better than -6 dB up to 110 GHz.