Alternative Determination of the Intrinsic Cut-Off Frequency Applied to a Degraded MOSFET

The cut-off frequency of a microwave MOSFET is obtained by fitting experimental data with a non-linear regression method. Using this approach, the overestimation of this parameter is avoided even when the effect of the gate-to-drain capacitance is considerable, such as in the case of MOSFETs degraded by hot carrier injection. In order to demonstrate this, the proposal is applied to a MOSFET gradually degraded by hot carriers, showing improved accuracy when comparing the results with those obtained using the classical forward extrapolation of the magnitude of the current gain.