Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs

We study the scaling properties of self-aligned InGaAs FinFETs with sub-10-nm fin widths fabricated through a CMOS compatible front-end process. Working devices with fins as narrow as 7 nm, fin aspect ratios in excess of 5, and gate lengths as short as 20 nm have been fabricated using precision dry etching and digital etch. The devices feature self-aligned metal contacts that are 20-30 nm away from the edge of the gate. FinFETs with L
_g
= 30 nm, W
_f
= 7 nm, and channel height of 40 nm exhibit a transconductance of 900 μS/μm at V
_DS
= 0.5 V. When normalized to W
_f
, this is a record value among all III-V FinFETs, indicating that our device architecture makes efficient use of conduction along the fin sidewalls.