Demonstration of Diamond-Based Schottky p-i-n Diode With Blocking Voltage > 500 V

Diamond is considered to be the ultimate semiconductor for power devices due to its high breakdown electric field, high carrier mobility, and superior thermal properties. The success of diamond-based electronic devices has been difficult due to critical challenges involved with poor doping efficiency and achievement of ohmic contacts. Achieving n-type diamond has proved to be more difficult over p-type so far. In this letter, we report the achievement of n-type doping in diamond, verified using Hall measurements, which was then used to fabricate Schottky p-i-n diodes measuring a forward current density greater than 300 A/cm
²
at 4 V and breakdown voltage of over 500 V with a 3.5-μm -thick drift layer. A Silvaco simulation was performed which agreed well with the experimental data showing turn-ON voltage of 1 V and an ideality factor of 1.04, consistent with the model of a p-i-n diode with a fully depleted n-type contact.