Silicon-Based BioFETs with 3-D Nanostructure: Easy integration, precise control of nanostructure, and a low device-to-device variation

In this paper, highly sensitive Si-NW BioFETs using a novel three-dimensional nanostructure were fabricated using a top-down approach and showed excellent electrical and sensing characteristics. The newly proposed BioFETs can provide multiple advantages, including easy integration, precise control over the NW design, and a low device-to-device variation. An SHNW structure can mitigate the STC problem in fabricating three-dimensional nanostructures, and this showed better intrinsic characteristics. The effectiveness of these devices results from their higher mechanical stability, better gate controllability, and increased effective channel width. Thus, the three-dimensional Si nanostructure holds great potential as channel material in BioFETs for future biosensing applications.