L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process

In this paper, on-chip matching Si-MMIC low noise amplifier (LNA) was fabricated in a 0.35 /spl mu/m SOI CMOS process. This LNA offers 8.7 dB gain, 4.2 dB NF, -2 dBm IIP3 at 2.1 GHz with 3 V, 3 mA DC power. The reduction of the dielectric loss of the spiral inductor is also discussed by referring to the extraction result of the equivalent circuit parameter.